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Saturday, August 15, 2020 | History

2 edition of Dopants and defects in semiconductors found in the catalog.

Dopants and defects in semiconductors

Matthew D. McCluskey

Dopants and defects in semiconductors

by Matthew D. McCluskey

  • 379 Want to read
  • 21 Currently reading

Published by Taylor & Francis in Boca Raton, FL .
Written in English

    Subjects:
  • Semiconductor doping,
  • TECHNOLOGY & ENGINEERING / Material Science,
  • Defects,
  • SCIENCE / Solid State Physics,
  • SCIENCE / Chemistry / General,
  • Semiconductors

  • Edition Notes

    Includes bibliographical references and index.

    StatementMatthew D. McCluskey, Eugene E. Haller
    ContributionsHaller, Eugene E.
    Classifications
    LC ClassificationsTK7871.85 .M3984 2012
    The Physical Object
    Paginationp. cm.
    ID Numbers
    Open LibraryOL25197664M
    ISBN 109781439831526
    LC Control Number2012000323

    A dopant, also called a doping agent, is a trace of impurity element that is introduced into a chemical material to alter its original electrical or optical properties. The amount of dopant necessary to cause changes is typically very low. When doped into crystalline substances, the dopant's atoms get incorporated into its crystal lattice. The crystalline materials are frequently either. This ensures that size of the atoms is not much different from the fourth group. Hence, the trivalent and pentavalent choices. These dopants give rise to two types of semiconductors: n-type; p-type; n-type semiconductor. An n-type semiconductor is created when pure semiconductors, like Si and Ge, are doped with pentavalent elements.

    Dopant atom migration was studied in GaAs/Al Ga As symmetric 3-well active regions with the sheet carrier concentration n s = × 10 10 c m − 2 (Deutsch et al., a).Since the dopant diffusion is due to the rate of incorporation, there is an exponentially decaying tail toward the growth surface, the as-grown structures have this dopant profile asymmetry, similar to the. Get this from a library! Dopants and defects in semiconductors. [Matthew D McCluskey; Eugene E Haller] -- "This revised edition continues to provide the most complete coverage of the fundamental knowledge of semiconductors, expanding on the latest technology and applications of semiconductors .

    Dopants in silicon have long been thought to diffuse through interaction with point defects, vacancies and interstitials. The dopant is only mobile after having associated with the point defect and is immobile when in a substitutional site. Simple first-order chemical reactions are used to describe the interaction between dopants and defects. Books. M.D. McCluskey, No-Frills Physics (Taylor & Francis, ). ISBN M.D. McCluskey and E.E. Haller, Dopants and Defects in Semiconductors, 2 nd.


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Dopants and defects in semiconductors by Matthew D. McCluskey Download PDF EPUB FB2

Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors.

The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and by:   Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors.

The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping.5/5(2). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors.

Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, : $ Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors.

The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts. The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors.

Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, by:   Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors.

The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect 4/5(1). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors.

Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors.

The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and s: 1. Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors.

The book fills a crucial gap between solid-state physics and more specialized course authors first present introductory concepts, including basic semiconductor theory, defect classifCited by: Dopants and Defects in Semiconductors Haller, Eugene E., McCluskey, Matthew D. ""The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics.

The second edition of this textbook lays the groundwork for both the classical and modern developments in the theory of semiconductors. This book is significant both for its presentation of the basic principles of the theory of defects in semiconductors and for its exposition of recent developments in the field, such as LEDs and laser diodes.

The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D.

McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington.

Dopants and Defects in Semiconductors Article (PDF Available) in Materials Today 15(s 7–8) July with Reads How we measure 'reads'. "Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors.

The book fills a crucial gap between solid-state physics and more specialized course texts. The actual book Dopants and Defects in Semiconductors has a lot details on it. So when you make sure to read this book you can get a lot of advantage.

The book was compiled by the very famous author. The writer makes some research previous to write this book.

That book very easy to read you can find the point easily after looking over this book. Browse book content. About the book chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and.

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties.

The doped material is referred to as an extrinsic semiconductor.A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate.

Dopants and defects in semiconductors. By Christopher a rather thin patch in the provision of graduate level primers focused on properties and characterisation methods for semiconductor.

Dopants and Defects in Semiconductors by Matthew D. McCluskey () Hardcover – January 1, out of 5 stars 2 ratings. See all 6 formats and editions Hide other formats and editions. Price New from Used from Kindle "Please retry" $ 5/5(2). Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors.

The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect.

Dopants and Defects in Semiconductors Ed 2; Light-Induced Processes in Optically-Tweezed Aerosol Droplets; Dopants and Defects in Semiconductors; [PDF] Identification of Defects in Semiconductors, Volume 51B (Semiconductors .Group 3 and 5 Dopants.

When foreign atoms are introduced into a semiconductor material, the characteristics of the material change. Depending on whether the added impurities have “extra” electrons or “missing” electrons determines how the bonding in the crystal lattice is affected, and therefore how the material’s electrical properties change.As a semiconductor physicist, I live and die by defects.

This book provides an EXCELLENT conceptual discussion on dopants and defects. I've thoroughly enjoyed it, especially the topics on localization (which are NEVER properly discussed) and have even used some of the concepts in presentations.